1.
ECS Transactions
; 98:185-204, 2020.
Article
in English
| Scopus | ID: covidwho-991948
ABSTRACT
This paper shows structures and features of a field-effect transistor (FET) fabricated using a c-axis aligned crystalline In-Ga-Zn oxide (CAAC-IGZO), which is a typical example of crystalline oxide semiconductor (OS) ceramics, as a channel material, and applications of the CAAC-IGZO FET up to this point. In this study, we propose an AI accelerator as novel LSI using an OS (OS LSI) and make a detail description of the AI accelerator. © 2020 ECS - The Electrochemical Society.